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  1. Tripyramids and associated defects in epitaxial silicon layers.G. R. Booker - 1965 - Philosophical Magazine 11 (113):1007-1020.
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  • Perfection of Expitaxial Silicon Layers Grown by the Pyrolysis of Silane.G. R. Booker, B. A. Joyce & R. R. Bradley - 1964 - Philosophical Magazine 10 (108):1087-1091.
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  • Growth of epitaxial silicon layers by vacuum evaporation.G. R. Booker & B. A. Unvala - 1965 - Philosophical Magazine 11 (109):11-30.
  • A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques.G. R. Booker & B. A. Joyce - 1966 - Philosophical Magazine 14 (128):301-315.
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  • Kinetics of the induction period for the nucleation of silicon on silicon substrates at U.H.V.R. J. Bennett & R. W. Gale - 1970 - Philosophical Magazine 22 (175):135-142.