Oriented growth of semiconductors I. Orientations in gallium arsenide grown epitaxially on germanium

Philosophical Magazine 11 (110):263-276 (1965)

Abstract This article has no associated abstract. (fix it)
Keywords No keywords specified (fix it)
Categories No categories specified
(categorize this paper)
DOI 10.1080/14786436508221855
Edit this record
Mark as duplicate
Export citation
Find it on Scholar
Request removal from index
Revision history

Download options

Our Archive

Upload a copy of this paper     Check publisher's policy     Papers currently archived: 45,283
External links

Setup an account with your affiliations in order to access resources via your University's proxy server
Configure custom proxy (use this if your affiliation does not provide a proxy)
Through your library

References found in this work BETA

Add more references

Citations of this work BETA

No citations found.

Add more citations

Similar books and articles

The Nature of Defects Inn+ Gallium Arsenide.P. W. Hutchinson & P. S. Dobson - 1974 - Philosophical Magazine 30 (1):65-73.
Four-Layer Stacking Faults in Gallium Arsenide.D. Laister & G. M. Jenkins - 1971 - Philosophical Magazine 24 (189):705-708.
Value Orientations of HRD Professionals in India.M. Mehta - 2005 - Journal of Human Values 11 (2):103-115.


Added to PP index

Total views
5 ( #1,054,638 of 2,279,963 )

Recent downloads (6 months)
3 ( #399,799 of 2,279,963 )

How can I increase my downloads?


My notes

Sign in to use this feature