Works by B. Pichaud

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6 found
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B. Pichaud [4]Bernard Pichaud [2]
  1.  20
    Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon.Mariaconcetta Canino, Gabrielle Regula, Ming Xu, Esidor Ntsoenzok, M. Lancin, Marie-France Barthe, Thierry Sauvage, E. Oliviero & Bernard Pichaud - 2011 - Philosophical Magazine 91 (34):4324-4331.
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  2.  9
    Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores.M. Lancin, M. Texier, G. Regula & B. Pichaud - 2009 - Philosophical Magazine 89 (15):1251-1266.
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  3.  6
    X-ray topographic observation of dislocation multiplication by cross-slip in Cu crystals.F. Minari, B. Pichaud & L. Capella - 1975 - Philosophical Magazine 31 (2):275-284.
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  4.  8
    Cross-slip at very low stresses in highly perfect Cu crystals.B. Pichaud & F. Minari - 1976 - Philosophical Magazine 34 (6):1121-1128.
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  5.  15
    Nitrogen doping and multiplicity of stacking faults in SiC.P. Pirouz, M. Zhang, H. McD Hobgood, M. Lancin, J. Douin & B. Pichaud - 2006 - Philosophical Magazine 86 (29-31):4685-4697.
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  6.  22
    Stacking faults in intrinsic and N-doped 4H–SiC: true influence of the N-doping on their multiplicity.Gabrielle Regula, Maryse Lancin, Bernard Pichaud, Thomas Neisius, Rachid Daineche & Sandrine Juillaguet - 2013 - Philosophical Magazine 93 (10-12):1317-1325.
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