Electrical and electron microscope studies of the annealing of tellurium-doped gallium arsenide

Philosophical Magazine 23 (185):1077-1100 (1971)

Abstract This article has no associated abstract. (fix it)
Keywords No keywords specified (fix it)
Categories (categorize this paper)
DOI 10.1080/14786437108217397
Options
Edit this record
Mark as duplicate
Export citation
Find it on Scholar
Request removal from index
Revision history

Download options

Our Archive


Upload a copy of this paper     Check publisher's policy     Papers currently archived: 46,179
External links

Setup an account with your affiliations in order to access resources via your University's proxy server
Configure custom proxy (use this if your affiliation does not provide a proxy)
Through your library

References found in this work BETA

Interstitial Dislocation Loops in Magnesium Oxide.G. W. Groves & A. Kelly - 1961 - Philosophical Magazine 6 (72):1527-1529.

Add more references

Citations of this work BETA

No citations found.

Add more citations

Similar books and articles

Four-Layer Stacking Faults in Gallium Arsenide.D. Laister & G. M. Jenkins - 1971 - Philosophical Magazine 24 (189):705-708.
The Nature of Defects Inn+ Gallium Arsenide.P. W. Hutchinson & P. S. Dobson - 1974 - Philosophical Magazine 30 (1):65-73.

Analytics

Added to PP index
2016-06-30

Total views
4 ( #1,139,739 of 2,285,631 )

Recent downloads (6 months)
2 ( #577,262 of 2,285,631 )

How can I increase my downloads?

Downloads

My notes

Sign in to use this feature