4f-electron localization in Ce x La 1-x MIn 5 with M = Co, Rh, or Ir

Abstract

The results of a de Haas-van Alphen study on the alloy series Ce xLa 1-xMIn 5, with M = Co, Rh, or Ir, are presented. It was suggested that 4f-electron localization is the primary driving factor for quantum criticality in the p, M phase diagram of Ce compounds. The close correspondence between ferromagnetism and f-electron localization were suggested to be similar to that observed between ferromagnetism and f-electron localization reported in systems such as CeRu 2Si 2. Fermi-liquid state to form for any x in the case of M = Rh was found to be inconsistent with theoretical models that propose antiferromagnetism to result from spin-density-wave formation.

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Author Profiles

Nick Harrison
University of Edinburgh
Dylan T. Hall
Tennessee Technological University

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